The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Jul. 28, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jung Ho Do, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A vertical field effect transistor (VFET) cell implementing a VFET circuit over a plurality of gate grids includes: a 1circuit including at least one VFET and provided over at least one gate grid; and a 2circuit including at least one VFET and provided over at least one gate grid formed on a left or right side of the 1circuit, wherein a gate of the VFET of the 1circuit is configured to share a gate signal or a source/drain signal of the VFET of the 2circuit, and the 1circuit is an (X−1)-contacted poly pitch (CPP) circuit, which is (X−1) CPP wide, converted from an X-CPP circuit which is X CPP wide and performs a same logic function as the (X−1)-CPP circuit, X being an integer greater than 1.