The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Jan. 11, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaeho Ahn, Hwasung-si, KR;

Woosung Yang, Gwangmyeong-si, KR;

Joonsung Lim, Hwasung-si, KR;

Sungmin Hwang, Hwasung-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 23/528 (2006.01); H01L 27/11526 (2017.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 2224/32225 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06572 (2013.01);
Abstract

An integrated circuit device includes: a lower memory stack including a plurality of lower word lines located on a substrate, an upper memory stack located on the lower memory stack and including a plurality of upper word lines, at least one first lower interconnection layer extending in a horizontal direction at a first vertical level between the lower memory stack and the upper memory stack, and configured to be electrically connected to at least one lower word line selected from the plurality of lower word lines, a separate insulating film covering at least one first lower interconnection layer, and at least one first upper interconnection layer extending in the horizontal direction at a second vertical level higher than the upper memory stack, and configured to be electrically connected to at least one upper word line selected from the upper word lines.


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