The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Feb. 19, 2021
Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Shawn R. Gibb, Huntersville, NC (US);

David Aichele, Huntersville, NC (US);

Ramakrishna Vetury, Charlotte, NC (US);

Mark D. Boomgarden, Huntersville, NC (US);

Jeffrey B. Shealy, Davidson, NC (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/8252 (2006.01); H01L 27/20 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/80 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H03H 3/08 (2006.01); H03H 9/46 (2006.01); H04B 1/44 (2006.01); H01L 41/18 (2006.01); H01L 41/314 (2013.01); H01L 41/37 (2013.01); H03H 9/02 (2006.01); H01L 29/778 (2006.01); H03H 3/02 (2006.01); H01L 23/66 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0605 (2013.01); H01L 21/0254 (2013.01); H01L 21/02598 (2013.01); H01L 21/8252 (2013.01); H01L 27/0617 (2013.01); H01L 27/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/80 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H03H 3/08 (2013.01); H03H 9/46 (2013.01); H04B 1/44 (2013.01); H01L 21/0242 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 23/66 (2013.01); H01L 29/7786 (2013.01); H01L 41/183 (2013.01); H01L 41/314 (2013.01); H01L 41/37 (2013.01); H01L 2223/6683 (2013.01); H01L 2224/48091 (2013.01); H03F 2200/165 (2013.01); H03F 2200/171 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03H 3/02 (2013.01); H03H 9/02007 (2013.01); H03H 9/0542 (2013.01); H03H 9/1014 (2013.01);
Abstract

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.


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