The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Jul. 26, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Teng-Yen Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/82 (2013.01);
Abstract

The present application discloses a method for fabricating a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps for reducing parasitic capacitance. The method includes providing a first semiconductor die, forming a connecting dielectric layer above the first semiconductor die, forming a first trench in the connecting dielectric layer, forming a plurality of sacrificial spacers on sides of the first trench, forming a first protection structure in the first trench, and performing an energy treatment to turn the plurality of sacrificial spacers into a plurality of air gaps. The plurality of sacrificial spacers are formed of an energy-removable material and the first protection structure is formed of copper, aluminum, titanium, tungsten, or cobalt.


Find Patent Forward Citations

Huang, Teng-Yen. (2023). Method for fabricating semiconductor device with protection structure and air gaps (U.S. Patent No. 11581267). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11581267

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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