The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Sep. 03, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Akiyoshi Hashimoto, Yokohama, JP;

Makoto Kuribara, Yokohama, JP;

Takeshi Tomizawa, Yokohama, JP;

Katsuhiko Ueki, Katsushika, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/02 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/025 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01);
Abstract

According to one embodiment, a memory system includes a non-volatile memory and a controller. The memory includes a plurality of storage areas. Each of the storage areas includes a plurality of memory cells to which threshold voltages are set in accordance with data. The controller acquires a first threshold voltage distribution of memory cells in a first storage area of the storage areas. The controller acquires a second threshold voltage distribution of memory cells in a second storage area of the storage areas. The controller detects non-normalcy in the first storage area or the second storage area from a first divergence quantity between the first threshold voltage distribution and the second threshold voltage distribution.


Find Patent Forward Citations

Loading…