The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Aug. 05, 2021
Omnivision Semiconductor (Shanghai) Co., Ltd., Shanghai, CN;
Pei-Wen Ko, Zhubei, TW;
Chun-Sheng Fan, Hsinchu, TW;
OMNIVISION SEMICONDUCTOR (SHANGHAI) CO., LTD., Shanghai, CN;
Abstract
The present invention provides a LCOS structure and a method for fabricating same. The LCOS structure includes: a silicon substrate; a liquid crystal layer and a transparent conductive layer both disposed above the silicon substrate. In the silicon substrate, there are formed a conductive pad, an opening where the conductive pad is exposed, and at least one metal layer. The opening is located peripherally around the liquid crystal layer, there is no portion of the metal layer located under the conductive pad. The conductive backing is located at the same vertical level as one metal layer in the at least one metal layer and electrically connected thereto, a conductive adhesive fills in the opening and a gap between the silicon substrate and the transparent conductive layer. The transparent conductive layer is electrically connected to the conductive pad by conductive metal particles in the conductive adhesive.