The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Feb. 10, 2021
Applicant:

Alpine Optoelectronics, Inc., Fremont, CA (US);

Inventors:

Xingyu Zhang, Fremont, CA (US);

Tongqing Wang, Fremont, CA (US);

Dawei Zheng, Fremont, CA (US);

Zhoufeng Ying, Fremont, CA (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/27 (2006.01); G02B 6/126 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/276 (2013.01); G02B 6/126 (2013.01); G02B 6/12016 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12116 (2013.01);
Abstract

An integrated waveguide polarizer comprising: a plurality of silicon layers and a plurality of silicon-nitride layers; each of the plurality of silicon layers and each of the plurality of silicon-nitride layers having a first end and an opposite second end, the first end having a wide width and the second end having a narrow width, such that each silicon layer and each silicon-nitride layer have tapered shapes; wherein the pluralities of silicon and silicon-nitride layers are overlapped, such that at least a portion of each silicon-nitride layer overlaps at least a portion of each silicon layer; and a plurality of oxide layers disposed between the pluralities of silicon-nitride and silicon layers, each oxide layer creating a separation spacing between each silicon-nitride and each silicon layers; wherein, when an optical signal is launched through the integrated waveguide polarizer, the optical signal is transitioned between each silicon-nitride layer and each silicon layer.


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