The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Aug. 08, 2018
Applicant:

Aichi Steel Corporation, Tokai, JP;

Inventors:

Norihiko Hamada, Aichi-ken, JP;

Akihiro Shimode, Aichi-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 19/07 (2006.01); C22F 1/10 (2006.01); H01F 1/153 (2006.01); H01F 41/02 (2006.01); G01R 33/02 (2006.01); C22F 1/00 (2006.01); C22C 19/00 (2006.01);
U.S. Cl.
CPC ...
G01R 33/02 (2013.01); C22C 19/00 (2013.01); C22C 19/07 (2013.01); C22F 1/00 (2013.01); C22F 1/10 (2013.01); H01F 1/153 (2013.01); H01F 1/15316 (2013.01); H01F 1/15325 (2013.01); H01F 1/15333 (2013.01); H01F 1/15391 (2013.01); H01F 41/02 (2013.01); C22C 2202/02 (2013.01);
Abstract

A magneto-sensitive wire (magneto-sensitive body) made of a Co-based alloy having a composite structure in which crystal grains are dispersed in an amorphous phase. The Co-based alloy is, for example, a Co—Fe—Si—B-based alloy, and the total amount of Si and B is preferably 20 to 25 at % with respect to the Co-based alloy as a whole. Preferably, the average diameter of the crystal grains is 70 nm or less and the area ratio of the crystal grains is 10% or less to the composite structure as a whole. The magneto-sensitive wire has a circular cross section and the wire diameter is about 1 to 100 μm. Such a magneto-sensitive wire can be obtained, for example, through a heat treatment step of heating an amorphous wire composed of a Co-based alloy at a temperature equal to or higher than a crystallization start temperature and lower than a crystallization end temperature.


Find Patent Forward Citations

Loading…