The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Dec. 17, 2019
Applicant:

Em Microelectronic Marin S.a., Marin, CH;

Inventors:

Yonghong Tao, Singapore, SG;

Pinchas Novac, Neuchatel, CH;

Sylvain Grosjean, Les Fins, FR;

Alexandre Deschildre, Marin, CH;

Hugues Blangy, Payerne, CH;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); G05F 3/22 (2006.01); G05F 3/02 (2006.01); G05F 3/16 (2006.01); G05F 3/30 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); G05F 3/02 (2013.01); G05F 3/16 (2013.01); G05F 3/22 (2013.01); G05F 3/222 (2013.01); G05F 3/30 (2013.01);
Abstract

A temperature sensor arrangement (), including a bandgap voltage generator (), which is configured to provide an output voltage (V); at least one semiconductor junction () for temperature sensing, which is biased by a biasing current flowing through said semiconductor junction (); and at least one poly-resistor (R) which is connected between the output () of the bandgap voltage generator () and the semiconductor junction (), thereby providing said biasing current from the bandgap voltage generator () to the semiconductor junction ().


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