The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Mar. 20, 2019
Nippon Chemical Industrial Co., Ltd., Tokyo, JP;
NIPPON CHEMICAL INDUSTRIAL CO., LTD., Tokyo, JP;
Abstract
The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass.