The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Apr. 22, 2021
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Hyeongnam Kim, Chandler, AZ (US);

Alain Charles, Redondo Beach, CA (US);

Mohamed Imam, Chandler, AZ (US);

Qin Lei, Chandler, AZ (US);

Chunhui Liu, Tempe, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H01L 29/7786 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01); H03K 2217/0081 (2013.01);
Abstract

In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form a half-bridge circuit and are arranged on a common foreign substrate having a common doping level. The switching circuit is configured to operate the half-bridge circuit at a voltage of at least 300 V.


Find Patent Forward Citations

Loading…