The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Feb. 28, 2020
Applicant:

Marvell Asia Pte. Ltd., Singapore, SG;

Inventors:

Xiaoguang He, Diamond Bar, CA (US);

Radhakrishnan L. Nagarajan, Santa Clara, CA (US);

Brian Taylor, Santa Clara, CA (US);

Assignee:

Marvell Asia Pte Ltd., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/01 (2006.01); H01S 5/10 (2021.01); H01S 5/323 (2006.01); H01S 5/028 (2006.01); H01S 5/0234 (2021.01);
U.S. Cl.
CPC ...
H01S 5/1021 (2013.01); G02F 1/011 (2013.01); H01S 5/028 (2013.01); H01S 5/0234 (2021.01); H01S 5/32391 (2013.01); G02F 2203/50 (2013.01);
Abstract

A thin-film device for a wavelength-tunable semiconductor laser. The device includes a cavity between a high-reflectivity facet and an anti-reflection facet designed to emit a laser light of a wavelength in a tunable range determined by two Vernier-ring resonators with a joint-free-spectral-range between a first wavelength and a second wavelength. The device further includes a film including multiple pairs of a first layer and a second layer sequentially stacking to an outer side of the high-reflectivity facet. Each layer in each pair has one unit of respective optical thickness except one first or second layer in one pair having a larger optical thickness. The film is configured to produce inner reflectivity of the laser light from the high-reflectivity facet at least >90% for wavelengths in the tunable range starting from the first wavelength but at least <50% for wavelengths in a 25 nm range around the second wavelength.


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