The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

May. 14, 2019
Applicant:

PH Matter, Llc, Columbus, OH (US);

Inventors:

Christopher T Holt, Bexley, OH (US);

Mary C Cramer, Columbus, OH (US);

Paul H. Matter, Columbus, OH (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/48 (2010.01); H01M 10/0525 (2010.01); H01M 4/62 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/483 (2013.01); H01M 4/625 (2013.01); H01M 4/628 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01);
Abstract

The instant invention includes a spherical porous secondary silicon-based particle and methods for producing the same. The spherical porous secondary silicon-based particle is comprised of agglomerated primary silicon-based nanoparticles. The secondary particle comprises a carbon coating that reduces the effective exposed surface area of the primary particles to the electrolyte, thus improving first cycle efficiency. The secondary particle further comprises porous regions that enable the silicon nanoparticles to expand during lithiation. Advantages include ease of castability with micron-sized spherical particles, ease of mixing spherical particles, ease of flow for spherical particles in various processing steps, and ease with obtaining higher loading, which translates to higher areal capacity and overall energy density of the cell. A readily scalable process for producing the particles using low-cost materials and low-cost processing methods is disclosed.


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