The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Nov. 26, 2019
Applicant:

Vanguard International Semiconductor Singapore Pte. Ltd., Singapore, SG;

Inventors:

Bevita Kallupalathinkal Chandran, Singapore, SG;

Jia Jie Xia, Singapore, SG;

Tze Sheong Neoh, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/08 (2006.01); C01B 21/072 (2006.01);
U.S. Cl.
CPC ...
H01L 41/0815 (2013.01); C01B 21/072 (2013.01);
Abstract

A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.


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