The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

May. 03, 2022
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Dong-Young Kim, Paju-si, KR;

Kyoung-Nam Lim, Gyeongsangbuk-do, KR;

Yu-Ho Jung, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3266 (2016.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 51/00 (2006.01); G09G 3/3291 (2016.01); H01L 51/50 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); G09G 3/3266 (2013.01); G09G 3/3291 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1244 (2013.01); H01L 27/1255 (2013.01); H01L 27/3211 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3265 (2013.01); H01L 27/3272 (2013.01); H01L 27/3276 (2013.01); H01L 29/78633 (2013.01); H01L 51/0097 (2013.01); H01L 51/5012 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0452 (2013.01); G09G 2330/021 (2013.01); H01L 27/3216 (2013.01); H01L 27/3218 (2013.01); H01L 2251/5392 (2013.01);
Abstract

Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.


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