The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Sep. 09, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Daisuke Matsubayashi, Sagamihara Kanagawa, JP;

Kensuke Ota, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/28 (2006.01); H01L 51/05 (2006.01); H01L 27/11582 (2017.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/281 (2013.01); H01L 27/11582 (2013.01); H01L 27/283 (2013.01); H01L 51/055 (2013.01); H01L 51/0566 (2013.01); G11C 16/06 (2013.01);
Abstract

A memory device according to an embodiment includes a fluid layer extending in a first direction, a particle in the fluid layer, a first control electrode made of a first material, a first insulating film provided between the fluid layer and the first control electrode, a second control electrode made of a second material and provided to be spaced apart from the first control electrode in the first direction, a second insulating film provided between the fluid layer and the second control electrode, a third control electrode made of a third material different from the first material and the second material and provided between the first control electrode and the second control electrode, and a third insulating film provided between the fluid layer and the third control electrode.


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