The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
May. 07, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jiho Park, Suwon-si, KR;
Kwangmin Park, Seoul, KR;
Wonjun Park, Hwaseong-si, KR;
Jeonghee Park, Hwaseong-si, KR;
Changyup Park, Hwaseong-si, KR;
Hwasung Chae, Iksan-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate; first conductive lines extending in a first direction; second conductive lines extending in a second direction; memory cell structures between the first conductive lines and the second conductive lines; and dummy cell structures that are electrically isolated and between the first conductive lines and the second conductive lines. The memory cell structures include a data storage material pattern including a phase change material layer; and a selector material pattern overlapping the data storage material pattern in a vertical direction. The dummy cell structures include a dummy pattern including a phase change material layer. The phase change material layer of the dummy pattern includes a crystalline phase portion and an amorphous phase portion. At a cross section of the phase change material layer of the dummy pattern, an area of the crystalline phase portion is larger than an area of the amorphous phase portion.