The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Nov. 23, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Venkataramana R. Chavva, Gloucester, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 27/14698 (2013.01); H01L 31/1892 (2013.01);
Abstract

A method of fabricating CMOS image sensors is disclosed. In contrast to traditional fabrication processes, the present sequence implants dopants into the epitaxial layer from both the first surface and the second surface. Because dopant is introduced through both sides, the maximum implant energy to perform the implant may be reduced by as much as 50%. In certain embodiments, the second implant is performed prior to the application of the electrical contacts. In another embodiments, the second implant is performed after the application of the electrical contacts. This method may allow deeper photodiodes to be fabricated using currently available semiconductor processing equipment than would otherwise be possible.


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