The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

May. 24, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wooyoung Choi, Seoul, KR;

Woonghwi Bae, Hwaseong-si, KR;

Jinwoo Bae, Yongin-si, KR;

Chaelin Yoon, Yongin-si, KR;

Sunghee Han, Hwaseong-si, KR;

Sunwoo Heo, Suwon-si, KR;

Deoksung Hwang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10897 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10894 (2013.01);
Abstract

A semiconductor device includes first bit lines disposed on a substrate. Buried contacts disposed among first bit lines and connected to the substrate are provided. Landing pads are disposed on the buried contacts. Second bit lines are disposed on a peripheral area of the substrate. Upper surfaces of the second bit lines and the landing pads are coplanar with each other. First insulating patterns are disposed among the second bit lines. Second insulating patterns are disposed among the landing pads. Cell capacitors connected to the landing pads are disposed. The first insulating patterns include an insulating layer different from at least one insulating layer of the second insulating patterns.


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