The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Aug. 01, 2017
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Henry Litzmann Edwards, Garland, TX (US);

Akram A. Salman, Plano, TX (US);

Md Iqbal Mahmud, Waterford, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/747 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/74 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 29/456 (2013.01); H01L 29/66386 (2013.01); H01L 29/747 (2013.01); H01L 29/0619 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/7436 (2013.01);
Abstract

A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.


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