The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Dec. 16, 2020
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

KyungChul Ok, Paju-si, KR;

JungSeok Seo, Paju-si, KR;

PilSang Yun, Paju-si, KR;

Jiyong Noh, Paju-si, KR;

Jaeman Jang, Paju-si, KR;

InTak Cho, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/02483 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/823412 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01);
Abstract

Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).


Find Patent Forward Citations

Loading…