The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Dec. 05, 2017
Applicants:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Mie University, Tsu, JP;
Inventors:
Assignees:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
MIE UNIVERSITY, Tsu, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); C30B 25/02 (2006.01); C30B 33/02 (2006.01); C30B 29/38 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02502 (2013.01); C30B 25/02 (2013.01); C30B 29/38 (2013.01); C30B 29/403 (2013.01); C30B 29/68 (2013.01); C30B 33/02 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02694 (2013.01); H01L 21/3245 (2013.01); H01L 33/007 (2013.01);
Abstract
There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.