The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Nov. 15, 2018
Centre National DE LA Recherche Scientifique, Paris, FR;
Institut Photovoltaïque D'ile DE France (Ipvf), Antony, FR;
Ecole Polytechnique, Palaiseau, FR;
L'air Liquide, Societe Anonyme Pour L'etude ET L'exploitation Des Procedes Georges Claude, Paris, FR;
Total SA, Courbevoie, FR;
Electricite DE France, Paris, FR;
Père Roca I Cabaroccas, Villebon sur Yvette, FR;
Wanghua Chen, Bures sur Yvette, FR;
Romain Cariou, Bourg-la-Reine, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
INSTITUT PHOTOVOLTAÏQUE D'ILE DE FRANCE (IPVF), Palaiseau, FR;
ECOLE POLYTECHNIQUE, Palaiseau, FR;
TOTALENERGIES SE, Paris la Défense, FR;
ELECTRICITE DE FRANCE, Paris, FR;
Abstract
The invention relates to a process for the preparation of a semiconductor material comprising at least one entirely monocrystalline semiconductor layer, said process comprising the steps of preparation of the surface of a first substrate to receive a monocrystalline silicon layer; deposition by Plasma-Enhanced Chemical Vapor Deposition (PECVD) of a layer of monocrystalline silicon by epitaxial growth with a growth rate gradient on the silicon layer monocrystalline obtained in step (i); and epitaxial growth of a monocrystalline layer of a semiconductor material on the monocrystalline silicon layer obtained in step (ii), to thus obtain a material comprising at least one entirely monocrystalline semiconductor layer. The invention also relates to a multilayer material comprising a monocrystalline layer of semiconductor material.