The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Jan. 18, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Gil Shapira, Ein Carmel, IL;
Noga Levy, Tel Aviv, IL;
Roy Jevnisek, Giv'atayim, IL;
Ishay Goldin, Dalia, IL;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Embodiments of the present disclosure enable and accurate detection of facial landmarks on mobile devices in real-time. An architecture of a facial landmark detection model is provided including one or more of an attention mechanism (e.g., an attention network), a graph convolution model (e.g., a two-dimensional facial geometry graph convolution model), a multiscale coarse-to-fine mechanism, a patch-facial landmark detachment mechanism, and error estimation techniques. The attention mechanism may increase the accuracy of the facial landmark detection model by attending to meaningful patches. The graph convolution network may improve patch feature aggregation by considering the facial landmarks' geometry. The coarse-to-fine mechanism reduces a network convergence to two cycles (e.g., two facial landmark detection iterations). A patch-facial landmark detachment mechanism reduces the computation burden without significant accuracy degradation. Error estimation techniques provide accurate estimation of the regression error to the computation load and increase the accuracy of the model.