The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Nov. 17, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Neil Gibson, Freising, DE;

Stefan Herzer, Marzling, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01);
Abstract

In some examples, a circuit comprises a first field effect transistor (FET) having a first gate adapted to couple to a reference voltage source, a first source coupled to a first current source, and a first drain coupled to a second current source. The circuit comprises a second FET having a second gate coupled to the first drain, a second drain coupled to the first current source, and a second source coupled to a first resistor. The circuit comprises a third FET having a third gate adapted to couple to a feedback loop of a voltage converter, a third source coupled to a third current source, and a third drain coupled to a fourth current source. The circuit comprises a fourth FET having a fourth gate coupled to the third drain, a fourth drain coupled to the third current source, and a fourth source coupled to a second resistor.


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