The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Feb. 17, 2021
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Abdul Shakoor, Plymouth, GB;

Mohsin Aziz, Plymouth, GB;

Jun-Youn Kim, Plymouth, GB;

Assignee:

Meta Platforms Technologies, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/46 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 27/153 (2013.01); H01L 33/005 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 μm. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR.


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