The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Jun. 10, 2021
Applicant:

The Board of Regents of the University of Oklahoma, Norman, OK (US);

Inventors:

Rui Q. Yang, Norman, OK (US);

Wenxiang Huang, Norman, OK (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/054 (2014.01); G02B 5/08 (2006.01); H02S 10/30 (2014.01); H01L 31/0735 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0547 (2014.12); G02B 5/0816 (2013.01); H01L 31/0735 (2013.01); H02S 10/30 (2014.12);
Abstract

A PV device comprises a first mirror comprising a reflectance of higher than 50%; a second mirror interface; and an optical cavity positioned between the first mirror and the second mirror interface and comprising at least one IC stage. Each of the at least one IC stage comprises a conduction band; a valence band; a hole barrier comprising a first band gap; an absorption region coupled to the hole barrier, comprising a second band gap that is less than the first band gap, and configured to absorb photons; and an electron barrier coupled to the absorption region so that the absorption region is positioned between the hole barrier and the electron barrier. The electron barrier comprises a third band gap that is greater than the second band gap. The PV device is configured to operate at a forward bias voltage with a net photon absorption for generating an electric output.


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