The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Jan. 15, 2021
Applicant:
Slt Technologies, Inc, Los Angeles, CA (US);
Inventors:
Drew W. Cardwell, Camas, WA (US);
Mark P. D'Evelyn, Vancouver, WA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0304 (2006.01); G02B 6/42 (2006.01); H01L 31/036 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); G02B 6/4206 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/036 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01); H01L 31/109 (2013.01); H01L 31/1892 (2013.01);
Abstract
According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.