The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Mar. 22, 2021
Applicant:
Ablic Inc., Tokyo, JP;
Inventor:
Masahiro Hatakenaka, Tokyo, JP;
Assignee:
ABLIC Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 29/66492 (2013.01);
Abstract
In the semiconductor device, a high-concentration diffusion layer and a low-concentration diffusion layer are disposed around a drain diffusion layer of an ESD protection element. The high-concentration diffusion layer is separated from a gate electrode, and a medium concentration LDD diffusion layer is disposed in a separation gap. Variations in characteristics are suppressed by reducing thermal treatment on the high-concentration diffusion layer and a medium concentration diffusion layer.