The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
May. 25, 2017
Dynex Semiconductor Limited, Lincolnshire, GB;
Zhuzhou Crrc Times Electric Co. Ltd., Hunan, CN;
Ian Deviny, Lincolnshire, GB;
Luther-King Ngwendson, Lincolnshire, GB;
John Hutchings, Lincolnshire, GB;
DYNEX SEMICONDUCTOR LIMITED, Lincoln, GB;
ZHUZHOU CRRC TIMES ELECTRIC CO. LTD., Hunan, CN;
Abstract
We disclose herein a gate controlled bipolar semiconductor device comprising: a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; a plurality of first contact regions of a second conductivity type located above the body region and having a higher doping concentration than the body region; a second contact region of a first conductivity type located laterally adjacent to the plurality of first contact regions, the second contact region having a higher doping concentration than the body region; at least two active trenches each extending from a surface into the drift region; an emitter trench extending from the surface into the drift region; wherein each first contact region adjoins an active trench so that, in use, a channel is formed along said each active trench and within the body region; wherein the second contact region adjoins the emitter trench; and wherein the emitter trench is located between two active trenches.