The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Apr. 28, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Yasuyuki Hoshi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A main semiconductor device element has first and second p-type high-concentration regions that mitigate electric field applied to bottoms of trenches. The first p-type high-concentration regions are provided separate from p-type base regions, face the bottoms of the trenches in a depth direction, and extend in a linear shape in a first direction that is a same direction in which the trenches extend. Between adjacent trenches of the trenches, the second p-type high-concentration regions are provided scattered in the first direction, separate from the first p-type high-concentration regions and the trenches and in contact with the p-type base regions. Between the second p-type high-concentration regions adjacent to one another in the first direction, n-type current spreading regions or n-type high-concentration regions having an impurity concentration higher than that of the n-type current spreading regions are provided in contact with the second p-type high-concentration regions.