The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Sep. 01, 2020
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Takayuki Sumida, Kawasaki, JP;

Yoshinori Tateishi, Naka-gun, JP;

Takahiro Yajima, Odawara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 27/146 (2006.01); H04N 5/374 (2011.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/14643 (2013.01); H01L 27/307 (2013.01); H01L 31/02366 (2013.01); H04N 5/374 (2013.01); H01L 27/14627 (2013.01);
Abstract

There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.


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