The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Apr. 23, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sony Varghese, Manchester, MA (US);

Min Gyu Sung, Essex, MA (US);

Assignee:

APPLIED Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 21/3083 (2013.01); H01L 21/31116 (2013.01); H01L 21/76816 (2013.01); H01L 27/10826 (2013.01); H01L 27/10876 (2013.01); H01L 27/10879 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01); H01L 29/41741 (2013.01); H01L 21/76877 (2013.01);
Abstract

Disclosed are DRAM devices and methods of forming DRAM devices. One method may include forming a plurality of trenches and angled structures, each angled structure including a first sidewall opposite a second sidewall, wherein the second sidewall extends over an adjacent trench. The method may include forming a spacer along a bottom surface of the trench, along the second sidewall, and along the first sidewall, wherein the spacer has an opening at a bottom portion of the first sidewall. The method may include forming a drain in each of the angled structures by performing an ion implant, which impacts the first sidewall through the opening at the bottom portion of the first sidewall. The method may include removing the spacer from the first sidewall, forming a bitline over the spacer along the bottom surface of each of the trenches, and forming a series of wordlines along the angled structures.


Find Patent Forward Citations

Loading…