The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Mar. 05, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Hiroki Kawai, Inazawa Aichi, JP;

Junji Kataoka, Kawasaki Kanagawa, JP;

Keiji Ikeda, Kawasaki Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1082 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 27/10873 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/78642 (2013.01); H01L 29/78693 (2013.01);
Abstract

A semiconductor device of an embodiment includes an oxide semiconductor layer. The oxide semiconductor layer includes a metal oxide containing at least one first metal element selected from the group consisting of indium and tin and at least one second metal element selected from the group consisting of zinc, gallium, aluminum, tungsten, and silicon. The oxide semiconductor layer includes a first region in which at least one anion element selected from the group consisting of fluorine and chlorine is contained within a range of 1 atomic % or more and less than 8 atomic % in the metal oxide.


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