The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11569211 B1

Date of Patent:

Jan. 31, 2023

Filed:

Jun. 22, 2021

Semiconductor die with improved thermal insulation between a power portion and a peripheral portion, method of manufacturing, and package housing the die

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Davide Giuseppe Patti, Mascalucia, IT;

Mario Antonio Aleo, Catania, IT;

Assignee:

STMICROELECTRONICS S.r.l., Agrate Brianza, IT;

Attorney:

Seed Intellectual Property Law Group LLP

Primary Examiner:

Errol V Fernandes

Int. Cl.

CPC ...

H01L 23/00 (2006.01); H01L 25/16 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01); H01L 25/00 (2006.01);

U.S. Cl.

CPC ...

H01L 25/16 (2013.01); H01L 21/763 (2013.01); H01L 21/76224 (2013.01); H01L 25/50 (2013.01);

Abstract

A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction.

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