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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11569182 B1

PDFFull Text
Date of Patent:
Jan. 31, 2023

Filed:

Oct. 01, 2020

Aluminum-based gallium nitride integrated circuits

Applicant:

Analog Devices, Inc., Norwood, MA (US);

Inventors:

Daniel Piedra, Cambridge, MA (US);

James G. Fiorenza, Carlisle, MA (US);

Puneet Srivastava, Wilmington, MA (US);

Andrew Proudman, Medford, MA (US);

Kenneth Flanders, Reading, MA (US);

Denis Michael Murphy, Concord, MA (US);

Leslie P. Green, Framingham, MA (US);

Peter R. Stubler, Andover, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:

Schwegman Lundberg & Woessner, P.A.

Primary Examiner:

Scott B Geyer

Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/45 (2006.01); H01L 23/48 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 21/8252 (2006.01); H01L 29/778 (2006.01); H01L 23/532 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/28575 (2013.01); H01L 21/8252 (2013.01); H01L 23/481 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 28/60 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/452 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 23/53214 (2013.01); H01L 29/4175 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6683 (2013.01);
Abstract

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

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