The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Jul. 14, 2021
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Sang Moon Lee, Suwon-si, KR;

Jae Young Na, Suwon-si, KR;

Eun Kwang Lee, Suwon-si, KR;

Won Hee Yoo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); H01G 4/12 (2006.01); H01G 4/012 (2006.01); H01G 2/06 (2006.01); C04B 35/01 (2006.01); H01G 4/008 (2006.01);
U.S. Cl.
CPC ...
H01G 4/30 (2013.01); C04B 35/01 (2013.01); H01G 2/065 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/1209 (2013.01); C04B 2235/652 (2013.01);
Abstract

An electronic component includes a body including a plurality of stacked dielectric layers and internal electrodes disposed with a corresponding dielectric layer interposed therebetween, and external electrodes disposed on the body and connected to corresponding internal electrodes. One of the internal electrodes includes a particle including Ni and Sn and a graphene layer disposed at a boundary of the particle. A ratio of an Sn content to a total content of Ni and Sn is Sn/(Ni+Sn), Sn/(Ni+Sn) of a first region located inside the particle at a first distance from a boundary between the particle and the graphene layer is A1, Sn/(Ni+Sn) of a second region located inside the particle at a second distance from a boundary between the particle and the graphene layer is A2, the second distance is smaller than the first distance, and A1 is smaller than A2.


Find Patent Forward Citations

Loading…