The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Mar. 30, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John Rozen, Hastings on Hudson, NY (US);

Seyoung Kim, Pohang, KR;

Paul Michael Solomon, Westchester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5614 (2013.01); G11C 13/004 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H01L 45/085 (2013.01); H01L 45/146 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0071 (2013.01);
Abstract

An embodiment of the invention may include a memory structure. The memory structure may include a first terminal connected to a first contact. The memory structure may include a second terminal connected to a second contact and a third contact. The memory structure may include a multi-level nonvolatile electrochemical cell having a variable resistance channel and a programming gate. The memory structure may include the first contact and second contact connected to the variable resistance channel. The memory structure may include the third contact is connected to the programming gate. This may enable decoupled read-write operations of the device.


Find Patent Forward Citations

Loading…