The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Sep. 26, 2020
Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Hui-Yang Chuang, Hsinchu, TW;

Chin-Yuan Ho, Hsinchu, TW;

Tsung-Tien Wu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 25/075 (2006.01); H01L 33/38 (2010.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/38 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/33505 (2013.01); H01L 2224/73203 (2013.01);
Abstract

A light-emitting device, including a circuit substrate, a first light-emitting diode, and a first fixing structure, is provided. The circuit substrate includes a substrate, a first pad, a flat layer, and a first electrical connection material. The first pad and the flat layer are located on the substrate. The flat layer has a first opening overlapping the first pad. The first electrical connection material is located in the first opening and is electrically connected to the first pad. The first light-emitting diode is located on the flat layer and in contact with the first electrical connection material. The first fixing structure is located between the first light-emitting diode and the flat layer. The vertical projection of the first fixing structure on the substrate is located in the vertical projection of the first light-emitting diode on the substrate.


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