The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Oct. 29, 2020
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
ChingYuan Tsai, Tianjin, CN;
Chun-Yi Wu, Tianjin, CN;
Fulong Li, Tianjin, CN;
Duxiang Wang, Tianjin, CN;
Chaoyu Wu, Xiamen, CN;
Wenhao Gao, Tianjin, CN;
Xiaofeng LiU, Tianjin, CN;
Weihuan Li, Tianjin, CN;
Liming Shu, Tianjin, CN;
Chao Liu, Tianjin, CN;
Tiajin Sanan Optoelectornics Co., Ltd., Tianjin, CN;
Abstract
A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 μm, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.