The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Aug. 08, 2019
China Triumph International Engineering Co., Ltd., Shanghai, CN;
Ctf Solar Gmbh, Dresden, DE;
Shou Peng, Shanghai, CN;
Xinjian Yin, Shanghai, CN;
Ganhua Fu, Shanghai, CN;
Krishnakumar Velappan, Dresden, DE;
Michael Harr, Kelkheim-Ruppertshain, DE;
Bastian Siepchen, Dresden, DE;
CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD., Shanghai, CN;
CTF SOLAR GMBH, Dresden, DE;
Abstract
The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.