The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Sep. 09, 2019
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;

Inventors:

Soichiro Shibasaki, Nerima Tokyo, JP;

Mutsuki Yamazaki, Yokohama Kanagawa, JP;

Kazushige Yamamoto, Yokohama Kanagawa, JP;

Yuya Honishi, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0445 (2014.01); H02S 40/38 (2014.01); H01L 31/0224 (2006.01); H01L 31/032 (2006.01); H01L 31/0687 (2012.01); H01L 31/072 (2012.01); H01L 31/0725 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0445 (2014.12); H01L 31/022475 (2013.01); H01L 31/022483 (2013.01); H01L 31/032 (2013.01); H01L 31/0687 (2013.01); H01L 31/072 (2013.01); H01L 31/0725 (2013.01); H02S 40/38 (2014.12);
Abstract

A solar cell of an embodiment includes: a p-electrode in which a first p-electrode and a second p-electrode are laminated; a p-type light-absorbing layer in direct contact with the first p-electrode; an n-type layer in direct contact with the p-type light-absorbing layer; and an n-electrode. The first p-electrode is disposed between the p-type light-absorbing layer and the second p-electrode. The p-type light-absorbing layer is disposed between the n-type layer and the first p-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. The first p-electrode includes a metal oxide containing Sn as a main component.


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