The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
May. 25, 2020
Chengdu Boe Optoelectronics Technology Co., Ltd., Sichuan, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Zheng Bao, Beijing, CN;
Gong Chen, Beijing, CN;
Yanxia Xin, Beijing, CN;
Hongwei Hu, Beijing, CN;
Yihao Wu, Beijing, CN;
Yiyang Zhang, Beijing, CN;
Guangzhou Zhao, Beijing, CN;
CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Sichuan, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
Embodiments of the present disclosure provide a thin film transistor, a method for manufacturing a thin film transistor, an array substrate, a display panel, and a display device. The thin film transistor includes: a base substrate; an active layer, an insulating layer, and a source-drain layer sequentially stacked on the base substrate, wherein the source-drain layer is electrically connected to the active layer through a via hole penetrating the insulating layer; and a transition layer arranged between the source-drain layer and the active layer at a position of the via hole, wherein the transition layer covers a bottom of the via hole and covers at least part of a sidewall of the via hole, and the transition layer comprises elements of the active layer and elements of a part of the source-drain layer, the part of the source-drain layer being in contact with the transition layer.