The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Feb. 16, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jongseon Ahn, Suwon-si, KR;

Youngjin Kwon, Suwon-si, KR;

Jeehoon Han, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11565 (2017.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 29/42328 (2013.01);
Abstract

A semiconductor device includes a channel structure arranged on a substrate and extending in a first direction perpendicular to a top surface of the substrate, the channel structure including a channel layer and a gate insulating layer; a plurality of insulating layers arranged on the substrate and surrounding the channel structure, the plurality of insulating layers spaced apart from each other in the first direction; a plurality of first gate electrodes surrounding the channel structure; and a plurality of second gate electrodes surrounding the channel structure. Between adjacent insulating layers from among the plurality of insulating layers are arranged a first gate electrode from among the plurality of first gate electrodes spaced apart along the first direction from a second gate electrode from among the plurality of second gate electrodes.


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