The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Jul. 16, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Minsu Lee, Seongnam-si, KR;

Kiseok Lee, Hwaseong-si, KR;

Minwoo Song, Seongnam-si, KR;

Hyun-Sil Oh, Hwaseong-si, KR;

Min Hee Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 8/14 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); G11C 7/18 (2013.01); G11C 8/14 (2013.01);
Abstract

A three-dimensional semiconductor device includes a first channel pattern on and spaced apart from a substrate, the first channel pattern having a first end and a second end that are spaced apart from each other in a first direction parallel to a top surface of the substrate, and a first sidewall and a second sidewall connecting between the first end and the second end, the first and second sidewalls being spaced apart from each other in a second direction parallel to the top surface of the substrate, the second direction intersecting the first direction, a bit line in contact with the first end of the first channel pattern, the bit line extending in a third direction perpendicular to the top surface of the substrate, and a first gate electrode adjacent to the first sidewall of the first channel pattern.


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