The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Nov. 29, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cristina Camagong, Ridgefield, CT (US);

Hariklia Deligianni, Alpine, NJ (US);

Damon B. Farmer, White Plains, NY (US);

Andrei Fustochenko, New City, NY (US);

Ying He, Champaign, IL (US);

Emily R. Kinser, Poughkeepsie, NY (US);

Yu Luo, Hopewell Junction, NY (US);

Roy R. Yu, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/308 (2006.01); B81C 1/00 (2006.01); G03F 7/00 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01); B82Y 15/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); B81C 1/00031 (2013.01); G03F 7/0002 (2013.01); B82Y 10/00 (2013.01); B82Y 15/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01);
Abstract

A method for forming a nanostructure includes coating an exposed surface of a base layer with a patterning layer. The method further includes forming a pattern in the patterning layer including nano-patterned non-random openings, such that a bottom portion of the non-random openings provides direct access to the exposed surface of the base layer. The method also includes depositing a material in the non-random openings in the patterning layer, such that the material contacts the exposed surface to produce repeating individually articulated nano-scale features. The method includes removing remaining portions of the patterning layer. The method further includes forming an encapsulation layer on exposed surfaces of the repeating individually articulated nanoscale features and the exposed surface of the base layer.


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