The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Jun. 04, 2020
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

Eric J. Beuville, Goleta, CA (US);

Micky Harris, Lompoc, CA (US);

Ryan Boesch, Goleta, CA (US);

Christian M. Boemler, Goleta, CA (US);

Assignee:

RAYTHEON COMPANY, Waltham, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/46 (2006.01); G01J 5/34 (2022.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
G01J 1/46 (2013.01); G01J 5/34 (2013.01); G01J 2001/446 (2013.01);
Abstract

A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (V) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.


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