The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Nov. 23, 2018
Applicant:

Oerlikon Surface Solutions Ag, Pfäffikon, Pfäffikon, CH;

Inventors:

Robert Raab, Vienna, AT;

Christian Martin Koller, Trofaiach, AT;

Paul Heinz Mayrhofer, Neckenmarkt, AT;

Mirjam Arndt, Bad Ragaz, CH;

Jürgen Ramm, Maienfeld, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/18 (2006.01); C23C 14/00 (2006.01); C23C 14/32 (2006.01); C23C 28/04 (2006.01); F01D 5/28 (2006.01);
U.S. Cl.
CPC ...
C23C 14/185 (2013.01); C23C 14/0042 (2013.01); C23C 14/0641 (2013.01); C23C 14/0676 (2013.01); C23C 14/325 (2013.01); C23C 28/042 (2013.01); F01D 5/288 (2013.01); F05D 2230/313 (2013.01); F05D 2300/2281 (2013.01);
Abstract

The present invention relates to a method for producing a multilayer film comprising aluminum, chromium, oxygen and nitrogen, in a vacuum coating chamber, the multilayer film comprising layers of type A and layers of type B deposited alternate one of each other, wherein during deposition of the multilayer film at least one target comprising aluminum and chromium is operated as cathode by means of a PVD technique and used in this manner as material source for supplying aluminum and chromium, and an oxygen gas flow and a nitrogen gas flow are introduced as reactive gases in the vacuum chamber for reacting with aluminum and chromium, thereby supplying oxygen and nitrogen for forming the multilayer film, characterized in that: —The A layers are deposited as oxynitride layers of Al—Cr—O—N by using nitrogen and oxygen as reactive gas at the same time, —The B layers are deposited as nitride layers of Al—Cr—N by reducing the oxygen gas flow and by increasing the nitrogen gas flow in order to use only nitrogen as reactive gas for the formation of the Al—Cr—N layer, and wherein the relation between oxygen content and nitrogen content in the multilayer film correspond to a ratio in atomic percentage having a value between and including 1.8 and 4.


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