High power, narrow linewidth semiconductor laser system and method of fabrication

Abstract

A laser system for generating a narrow linewidth semiconductor light beam includes a substrate, a gain chip affixed on the substrate and configured to amplify light beam, and an optical feedback photonic chip affixed on the substrate, optically coupled to the gain chip, and configured to output light beam, which has a narrow linewidth around a resonant frequency of the optical feedback photonic chip, to the gain chip. The optical feedback photonic chip includes first and second optical gratings, a first multimode interferometer (MMI) and a second MMI optically coupled with a respective end of the first and second optical gratings, a third MMI configured to output two light beams to the first and second MMIs, respectively, through a respective waveguide. Based on receiving a respective one of the two light beams, the first MMI outputs two light beams to its respective end of the first and second optical gratings and the second MMI outputs two light beams to its respective end of the first and second optical gratings, the first and second optical gratings output second and third light beams, the second light beam, of which a linewidth is narrower than a linewidth of the third light beam, is directed to the third MMI, and an output port of the third MMI is configured to direct the second light beam to the gain chip.