The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
May. 28, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Nikolaos-Panteleimon Diamantopoulos, Tokyo, JP;
Takaaki Kakitsuka, Tokyo, JP;
Shinji Matsuo, Tokyo, JP;
Assignee:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/0625 (2006.01); H01S 5/062 (2006.01); H01S 5/10 (2021.01); H01S 5/12 (2021.01);
U.S. Cl.
CPC ...
H01S 5/06258 (2013.01); H01S 5/06226 (2013.01); H01S 5/06236 (2013.01); H01S 5/1003 (2013.01); H01S 5/12 (2013.01); H01S 5/0623 (2013.01); H01S 5/1053 (2013.01); H01S 5/1064 (2013.01);
Abstract
A semiconductor laser is provided with: an active layer that excites a transverse electric (TE) mode and a transverse magnetic (TM) mode of light and constitutes at least a part of a resonator guiding the TE mode and the TM mode of light; and a diffraction grating as a frequency difference setting structure that sets the difference in oscillation frequency between the TE mode and the TM mode of light higher than a relaxation-oscillation frequency.